FCH47N60 Datasheet | onsemi

MOSFET - N-Channel, SUPERFET) II 600 V, 47 A, 70 m W Description Super FET II MOSFET is ON Semiconductor’s first generation of high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. Features - Typ. RDS(on) = 58 m W - 650 V @ TJ = 150°C - Ultra Low Gate Charge (Typ. Qg = 210 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 420 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - Tele / Sever Power Supplies - Industrial Power Supplies .onsemi. VDS 600 V RDS(ON) MAX 70 m W @ 10 V ID MAX 47 A S N-CHANNEL MOSFET SD G TO- 247- 3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 47N60 © Semiconductor ponents Industries, LLC, 2009 April, 2020 - Rev. 3 $Y &Z &3 &K FCH47N60 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data...