FCH47N60 - N-Channel MOSFET

onsemi

General Description

SuperFET II MOSFET is ON Semiconductor’s first generation of high voltage super

junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

Typ. RDS(on) = 58 mW.
650 V @ TJ = 150°C.
Ultra Low Gate Charge (Typ. Qg = 210 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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FCH47N60 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FCH47N60
Manufacturer	onsemi
File Size	410.21 KB
Description	N-Channel MOSFET
Datasheet	FCH47N60 Datasheet

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MOSFET – N-Channel, SUPERFET) II 600 V, 47 A, 70 mW FCH47N60 Description SuperFET II MOSFET is ON Semiconductor’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • Typ. RDS(on) = 58 mW • 650 V @ TJ = 150°C • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.