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MOSFET – N-Channel, SUPERFET) II
600 V, 47 A, 70 mW
FCH47N60
Description SuperFET II MOSFET is ON Semiconductor’s first generation of
high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
• Typ. RDS(on) = 58 mW • 650 V @ TJ = 150°C • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
FCH47N60 Datasheet
