Datasheet4U Logo Datasheet4U.com

FCH47N60NF - MOSFET

General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Key Features

  • 650 V @ TJ = 150oC.
  • Typ. RDS(on) = 57.5 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 240 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCH47N60NF N-Channel MOSFET ON Semiconductor
FCH47N60N N-Channel MOSFET ON Semiconductor
FCH47N60 N-Channel MOSFET ON Semiconductor
FCH47N60-F085 N-Channel MOSFET ON Semiconductor
FCH47N60F N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCH47N60N N-Channel MOSFET
FCH47N60 N-Channel MOSFET
FCH47N60F 600V N-Channel MOSFET
FCH041N60E MOSFET
FCH041N60F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCH47N60NF — N-Channel SupreMOS® FRFET® MOSFET FCH47N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 45.8 A, 65 mΩ November 2013 Features • 650 V @ TJ = 150oC • Typ. RDS(on) = 57.5 mΩ • Ultra Low Gate Charge (Typ. Qg = 240 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.