Datasheet4U Logo Datasheet4U.com

FCH47N60NF - MOSFET

Datasheet Summary

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • 650 V @ TJ = 150oC.
  • Typ. RDS(on) = 57.5 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 240 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FCH47N60NF

Datasheet Details

Part number FCH47N60NF
Manufacturer Fairchild Semiconductor
File Size 573.68 KB
Description MOSFET
Datasheet download datasheet FCH47N60NF Datasheet
Additional preview pages of the FCH47N60NF datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCH47N60NF — N-Channel SupreMOS® FRFET® MOSFET FCH47N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 45.8 A, 65 mΩ November 2013 Features • 650 V @ TJ = 150oC • Typ. RDS(on) = 57.5 mΩ • Ultra Low Gate Charge (Typ. Qg = 240 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
Published: |