FCH47N60NF Datasheet | Fairchild Semiconductor

- N-Channel Supre MOS® FRFET® MOSFET N-Channel Supre MOS® FRFET® MOSFET 600 V, 45.8 A, 65 mΩ November 2013 Features - 650 V @ TJ = 150o C - Typ. RDS(on) = 57.5 mΩ - Ultra Low Gate Charge (Typ. Qg = 240 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 420 p F) - 100% Avalanche Tested - Ro HS pliant Application - Solar Inverter - AC-DC Power Supply Description The Supre MOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. Supre MOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. Supre MOS FRFET® MOSFET’s optimized body diode...