FCH47N60N Datasheet | Fairchild Semiconductor

.Data Sheet.co.kr FCH47N60N 600V N-Channel MOSFET Supre MOS N-Channel MOSFET 600V, 47A, 62mΩ Features - 650V @TJ = 150 C - RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A - Ultra Low Gate Charge ( Typ.Qg =115n C) - Low Effective Output Capacitance - 100% Avalanche Tested - Ro HS pliant o December 2011 Description The Supre MOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, Supre MOS provides world class Rsp, superior switching performance and ruggedness. This Supre MOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/tele power, FPD TV power, ATX power, and industrial power applications. TO-247 MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C (Note 3) -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed (Note 1) (Note 2) Ratings 600 ±30 47 29.7 141 3068 15.7 3.7 100 20 368 2.94 -55 to +150 300 Units V V A A m J A m J V/ns V/ns W W/o C o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient Ratings 0.34 0.24 40 o Units C/W ©2010 Fairchild Semiconductor Corporation FCH47N60N Rev. C1 .fairchildsemi. Datasheet pdf - http://..net/ .Data Sheet.co.kr FCH47N60N 600V...