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FCH47N60N - N-Channel MOSFET

General Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Key Features

  • 650V @TJ = 150 C.
  • RDS(on) = 51.5mΩ ( Typ. )@ VGS = 10V, ID =23.5 A.
  • Ultra Low Gate Charge ( Typ. Qg =115nC).
  • Low Effective Output Capacitance.
  • 100% Avalanche Tested.
  • RoHS Compliant o December 2011 TM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr FCH47N60N 600V N-Channel MOSFET SupreMOS FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features • 650V @TJ = 150 C • RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A • Ultra Low Gate Charge ( Typ.Qg =115nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant o December 2011 TM Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.