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FCH47N60 — N-Channel SuperFET® MOSFET
FCH47N60
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 mΩ
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant
Applications
• Solar Inverter • AC-DC Power Supply
December 2013
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.