FCH47N60 Datasheet | Fairchild Semiconductor

- N-Channel Super FET® MOSFET N-Channel Super FET® MOSFET 600 V, 47 A, 70 mΩ Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 58 mΩ - Ultra Low Gate Charge (Typ. Qg = 210 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 420 p F) - 100% Avalanche Tested - Ro HS pliant Applications - Solar Inverter - AC-DC Power Supply December 2013 Description Super FET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. TO-247 MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS IDM VGSS EAS IAR EAR dv/dt Parameter Drain to Source Voltage Drain Current Drain Current Continuous (TC = 25°C) Continuous (TC = 100°C) Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power...