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FCH47N60F-F085 - N-Channel MOSFET

General Description

SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on

resistance and lower gate charge performance.

Key Features

  • Typical rDS(on) = 66 mW at VGS = 10 V, ID = 47 A.
  • Typical Qg(tot) = 190 nC at VGS = 10 V, ID = 47 A.
  • UIS Capability.
  • Qualified to AEC Q101 and PPAP Capable.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, 600 V, 47 A, 75 mW FCH47N60F-F085 Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on−resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET is suitable for various automotive DC/DC power conversion.