FCH47N60F Datasheet - ON Semiconductor

N-Channel MOSFET

FCH47N60F Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 58 mW

* Ultra Low Gate Charge (Typ. Qg = 210 nC)

* Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCH47N60F General Description

SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s.

FCH47N60F Datasheet (412.00 KB)