FCH47N60N Datasheet, Mosfet, ON Semiconductor

FCH47N60N Features

• Mosfet
• 650 V @ TJ = 150°C
• RDS(on) = 51.5 mW (Typ.) @ VGS = 10 V, ID = 23.5 A
• Ultra Low Gate Charge (Typ. Qg = 115 nC)
• Low Effective Output Capacitance (

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Part number:

FCH47N60N

Manufacturer:

ON Semiconductor ↗

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📄 Datasheet

Description:

N-channel mosfet. The SUPREMOS MOSFET is ON Semiconductor’s next generation of high voltage super

junction (SJ) technology employing a deep tre

FCH47N60N Application

• Applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Features
• 650 V @ TJ = 150°C

TAGS

FCH47N60N

ON Semiconductor

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