FCH06A09 Datasheet (112.98 KB)
FCH06A09
Nihon Inter Electronics
112.98 KB
Schottky barrier diode.
６Ａ ９０Ｖ
SBD Type FCH06A09
INSTANTANEOUS FORWARD CURRENT (A)
20 10
5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
FCH06A09 (per Arm)
Tj=25°C Tj=150°C
.
📁 Related Datasheet
FCH06A10 - Schottky Barrier Diode
(Kyocera)
6FKRWWN\%DUULHU'LRGH
)&+ $
72 )XOO0ROG
્ٹশ)HDWXUHV
,5 /RZOHDNDJHFXUUHQW
ৈఢణ +LJKIUHTXHQF\RSHUDWLRQ
5R+6ഥৌૢ 5R+6FRPSOLDQW
.
FCH06A10 - Schottky barrier Diode
(Nihon Inter Electronics)
６Ａ １００Ｖ
SBD Type FCH06A10
INSTANTANEOUS FORWARD CURRENT (A)
20 10
5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
FCH06A10 (per Arm)
Tj=25°C Tj=150°C
.
FCH067N65S3 - N-Channel MOSFET
(ON Semiconductor)
FCH067N65S3
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive
650 V, 44 A, 67 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hig.
FCH067N65S3 - N-Channel MOSFET
(Fairchild Semiconductor)
FCH067N65S3 — N-Channel SuperFET® III MOSFET
FCH067N65S3
N-Channel SuperFET® III MOSFET
650 V, 44 A, 67 m
June 2016
Features
• 700 V @ TJ = 150 oC.
FCH067N65S3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Very high mutation ruggedness ·Easy to use ·100% avalanche .
FCH023N65S3 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive
650 V, 75 A, 23 mW
FCH023N65S3
Description SUPERFET III MOSFET is onsemi’s brand−new high voltage.
