FCH47N60 Datasheet - ON Semiconductor

N-Channel MOSFET

FCH47N60 Features

* Typ. RDS(on) = 58 mW

* 650 V @ TJ = 150°C

* Ultra Low Gate Charge (Typ. Qg = 210 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCH47N60 General Description

SuperFET II MOSFET is ON Semiconductor’s first generation of high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superio.

FCH47N60 Datasheet (410.21 KB)