FCI11N60 Key Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 0.32Ω
- Ultra Low Gate Charge (typ. Qg = 40nC)
- Low Effective Output Capacitance (typ. Cosseff. = 95pF)
- 100% Avalanche Tested
- Part: FCI11N60
- Manufacturer: Fairchild (official site)
- Size: 1.00 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FCI25N60N | N-Channel SupreMOS MOSFET |
| FCI25N60N_F102 | N-Channel SupreMOS MOSFET |
| FCI7N60 | 600V N-Channel MOSFET |
FCI11N60 Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very...