Datasheet4U Logo Datasheet4U.com

FCI7N60 - 600V N-Channel MOSFET

Datasheet Summary

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 650V @TJ = 150°C.
  • Typ. RDS(on) = 0.53Ω.
  • Ultra Low Gate Charge (typ. Qg = 25nC).
  • Low Effective Output Capacitance (typ. Cosseff. = 60pF).
  • 100% Avalanche Tested TM.

📥 Download Datasheet

Datasheet preview – FCI7N60

Datasheet Details

Part number FCI7N60
Manufacturer Fairchild Semiconductor
File Size 0.98 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet FCI7N60 Datasheet
Additional preview pages of the FCI7N60 datasheet.

📁 Similar Datasheet

  • FCI-125G-xxxHR - Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-H125G-010 - 1.25Gbps Silicon Photodetector (OSI)
  • FCI-H125G-GAAS-100 - (FCI-H125G-GAAS-100 / FCI-H250G-GAAS-100) GaAs Photodiodes (Laser Components)
  • FCI-H250G-GAAS-100 - (FCI-H125G-GAAS-100 / FCI-H250G-GAAS-100) GaAs Photodiodes (Laser Components)
  • FCI-HR005 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR008 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR020 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR026 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR040 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-INGAAS-120 - (FCI-INGAAS-55 - FCI-INGAAS-500) High Speed InGaAs Photodiodes (Laser Components)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
( DataSheet : www.DataSheet4U.com ) FCI7N60 600V N-Channel MOSFET July 2005 SuperFET FCI7N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.53Ω • Ultra Low Gate Charge (typ. Qg = 25nC) • Low Effective Output Capacitance (typ. Cosseff. = 60pF) • 100% Avalanche Tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Published: |