FCI25N60N Datasheet | Fairchild Semiconductor

- N-Channel Supre MOS® MOSFET N-Channel Supre MOS® MOSFET 600 V, 25 A, 125 mΩ November 2013 Features - RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A - Ultra Low Gate Charge (Typ. Qg = 57 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 262 p F) - 100% Avalanche Tested - Ro HS pliant Application - Solar Inverter - AC-DC Power Supply Description The Supre MOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. Supre MOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/tele power, FPD TV power, ATX power, and industrial power applications. I2-PAK MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power...