FCI25N60N_F102 Datasheet | Fairchild Semiconductor

FCI25N60N_F102 N-Channel MOSFET March 2013 N-Channel Supre MOS® MOSFET 600 V, 25 A, 125 mΩ Features - RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A - Ultra Low Gate Charge (Typ. Qg = 57 n C) - Low Effective Output Capacitance (Typ. Coss.eff = 262 p F) - 100% Avalanche Tested - Ro HS pliant Applications - Solar Inverter - AC-DC Power Supply Description The Supre MOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. Supre MOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. MOSFET Maximum Ratings TC = 25o C unless otherwise noted- Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Continuous (TC = 25o C) Continuous (TC = 100o C) Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25o C) Derate above 25o C TJ, TSTG Operating and Storage Temperature...