FCI25N60N_F102 - N-Channel SupreMOS MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FCI25N60N_F102
Manufacturer	Fairchild Semiconductor
File Size	355.27 KB
Description	N-Channel SupreMOS MOSFET
Datasheet	FCI25N60N_F102 Datasheet
Additional preview pages of the FCI25N60N_F102 datasheet.

Product details

Description

The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs.

Features

RDS(on) = 107 mΩ (Typ. )@ VGS = 10 V, ID = 12.5 A.
Ultra Low Gate Charge (Typ. Qg = 57 nC).
Low Effective Output Capacitance (Typ. Coss. eff = 262 pF).
100% Avalanche Tested.
RoHS Compliant.

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Published: Oct 18, 2015 |