FCI25N60N_F102 Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter...
FCI25N60N_F102 Key Features
- RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A
- Ultra Low Gate Charge (Typ. Qg = 57 nC)
- Low Effective Output Capacitance (Typ. Coss.eff = 262 pF)
- 100% Avalanche Tested
- RoHS pliant