Datasheet4U Logo Datasheet4U.com

FCI25N60N_F102 - N-Channel SupreMOS MOSFET

Datasheet Summary

Description

The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs.

Features

  • RDS(on) = 107 mΩ (Typ. )@ VGS = 10 V, ID = 12.5 A.
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 262 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FCI25N60N_F102

Datasheet Details

Part number FCI25N60N_F102
Manufacturer Fairchild Semiconductor
File Size 355.27 KB
Description N-Channel SupreMOS MOSFET
Datasheet download datasheet FCI25N60N_F102 Datasheet
Additional preview pages of the FCI25N60N_F102 datasheet.

📁 Similar Datasheet

  • FCI-125G-xxxHR - Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-H125G-010 - 1.25Gbps Silicon Photodetector (OSI)
  • FCI-H125G-GAAS-100 - (FCI-H125G-GAAS-100 / FCI-H250G-GAAS-100) GaAs Photodiodes (Laser Components)
  • FCI-H250G-GAAS-100 - (FCI-H125G-GAAS-100 / FCI-H250G-GAAS-100) GaAs Photodiodes (Laser Components)
  • FCI-HR005 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR008 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR020 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR026 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-HR040 - (FCI-HR005 - FCI-HR040) Large Active Area and High Speed Silicon Photodiodes (Laser Components)
  • FCI-INGAAS-120 - (FCI-INGAAS-55 - FCI-INGAAS-500) High Speed InGaAs Photodiodes (Laser Components)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCI25N60N_F102 N-Channel MOSFET March 2013 FCI25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features • RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 262 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness.
Published: |