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FCI11N60 - 600V N-Channel MOSFET

Datasheet Summary

Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • 650V @TJ = 150°C.
  • Typ. RDS(on) = 0.32Ω.
  • Ultra Low Gate Charge (typ. Qg = 40nC).
  • Low Effective Output Capacitance (typ. Cosseff. = 95pF).
  • 100% Avalanche Tested TM.

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Datasheet preview – FCI11N60

Datasheet Details

Part number FCI11N60
Manufacturer Fairchild Semiconductor
File Size 1.00 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet FCI11N60 Datasheet
Additional preview pages of the FCI11N60 datasheet.

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( DataSheet : www.DataSheet4U.com ) FCI11N60 600V N-Channel MOSFET July 2005 SuperFET FCI11N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff. = 95pF) • 100% Avalanche Tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
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