FCI11N60 Datasheet | Fairchild Semiconductor

( Data Sheet : .. ) FCI11N60 600V N-Channel MOSFET July 2005 Super FET 600V N-Channel MOSFET Features - 650V @TJ = 150°C - Typ. RDS(on) = 0.32Ω - Ultra Low Gate Charge (typ. Qg = 40n C) - Low Effective Output Capacitance (typ. Cosseff. = 95p F) - 100% Avalanche Tested Description Super FETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. { z G{ G D S z...