FCI25N60N

The FCI25N60N is N-Channel SupreMOS MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FCI25N60N
Manufacturer	Fairchild Semiconductor
File Size	575.22 KB
Description	N-Channel SupreMOS MOSFET
Datasheet	FCI25N60N_FairchildSemiconductor.pdf
Additional preview pages of the FCI25N60N datasheet.

Product details

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

RDS(on) = 107 mΩ (Typ. ) @ VGS = 10 V, ID = 12.5 A.
Ultra Low Gate Charge (Typ. Qg = 57 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 262 pF).
100% Avalanche Tested.
RoHS Compliant.

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Other Datasheets by Fairchild Semiconductor

FCI25N60N_F102 - N-Channel SupreMOS MOSFET
FCI11N60 - 600V N-Channel MOSFET
FCI7N60 - 600V N-Channel MOSFET

Published: Oct 6, 2013 |