Datasheet4U Logo Datasheet4U.com

FCP22N60N - N-Channel MOSFET

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • BVDSS > 650 V @ TJ = 150oC.
  • RDS(on) = 140 mΩ (Typ. ) @ VGS = 10 V, ID = 11 A.
  • Ultra Low Gate Charge (Typ. Qg = 45 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FCP22N60N

Datasheet Details

Part number FCP22N60N
Manufacturer Fairchild Semiconductor
File Size 649.33 KB
Description N-Channel MOSFET
Datasheet download datasheet FCP22N60N Datasheet
Additional preview pages of the FCP22N60N datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
Published: |