FDAF59N30 mosfet equivalent, n-channel mosfet.
* 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
* Low gate charge ( typical 77 nC)
* Low Crss ( typical 80 pF)
* Fast switching
* 100% avalanche tested
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TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior s.
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