FDAF59N30 Key Features
- 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
- Low gate charge ( typical 77 nC)
- Low Crss ( typical 80 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FDAF59N30
- Manufacturer: Fairchild (official site)
- Size: 792.38 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDAF62N28 | N-Channel MOSFET |
| FDAF69N25 | N-Channel MOSFET |
| FDAF75N28 | N-Channel MOSFET |
| FDA032N08 | N-Channel MOSFET |
| FDA15N65 | N-Channel MOSFET |
FDAF59N30 Description
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...