Datasheet Summary
FDAF69N25 250V N-Channel MOSFET
September 2005
UniFET
250V N-Channel MOSFET
Features
- 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V
- Low gate charge ( typical 77 nC)
- Low Crss ( typical 84 pF)
- Fast switching
- Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode...