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FDAF69N25 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V.
  • Low gate charge ( typical 77 nC).
  • Low Crss ( typical 84 pF).
  • Fast switching.
  • Improved dv/dt capability TM.

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Datasheet Details

Part number FDAF69N25
Manufacturer Fairchild Semiconductor
File Size 657.80 KB
Description N-Channel MOSFET
Datasheet download datasheet FDAF69N25 Datasheet
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FDAF69N25 250V N-Channel MOSFET September 2005 UniFET FDAF69N25 250V N-Channel MOSFET Features • 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 84 pF) • Fast switching • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode power supplies. D { z G{ G D S   z z TO-3PF FQAF Series www.DataSheet4U.
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