FDAF75N28 Datasheet | Fairchild Semiconductor

FDAF75N28 280V N-Channel MOSFET October 2006 280V N-Channel MOSFET Features - 46A, 280V, RDS(on) = 0.041Ω @VGS = 10 V - Low gate charge ( typical 111 nC) - Low Crss ( typical 90 pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability UniFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power...