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FDAF75N28 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 46A, 280V, RDS(on) = 0.041Ω @VGS = 10 V.
  • Low gate charge ( typical 111 nC).
  • Low Crss ( typical 90 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability UniFET.

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Datasheet Details

Part number FDAF75N28
Manufacturer Fairchild Semiconductor
File Size 754.88 KB
Description N-Channel MOSFET
Datasheet download datasheet FDAF75N28 Datasheet
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FDAF75N28 280V N-Channel MOSFET October 2006 FDAF75N28 280V N-Channel MOSFET Features • 46A, 280V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 111 nC) • Low Crss ( typical 90 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G D S TO-3PF FDAF Series www.DataSheet4U.
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