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FDAF59N30 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V.
  • Low gate charge ( typical 77 nC).
  • Low Crss ( typical 80 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability UniFET.

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Datasheet Details

Part number FDAF59N30
Manufacturer Fairchild Semiconductor
File Size 792.38 KB
Description N-Channel MOSFET
Datasheet download datasheet FDAF59N30 Datasheet
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FDAF59N30 300V N-Channel MOSFET October 2006 FDAF59N30 300V N-Channel MOSFET Features • 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G D S TO-3PF FDAF Series www.DataSheet4U.
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