FDB2670
Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.
Key Features
- 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
- Low gate charge (27 nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
