FDB2670 mosfet equivalent, n-channel mosfet.
* 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
* Low gate charge (27 nC typical)
* Fast switching speed
* High performance trench technology for extremely .
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature.
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