FDB28N30 Key Features
- RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A
- Low gate charge ( Typ. 39nC)
- Low Crss ( Typ. 35pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Continuous (
- Part: FDB28N30
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 289.87 KB
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