FDB52N20 Key Features
- RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A
- Low Gate Charge (Typ. 49 nC)
- Low Crss (Typ. 66 pF)
- 100% Avalanche Tested
| Part Number | Description |
|---|---|
| FDB5645 | 60V N-Channel MOSFET |
| FDB5680 | 60V N-Channel MOSFET |
| FDB5686 | 60V N-Channel MOSFET |
| FDB5690 | 60V N-Channel MOSFET |
| FDB5800 | N-Channel MOSFET |