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FDB5690 - 60V N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V.
  • Critical DC electrical parameters specified at evevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • High performance trench technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating. D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series.

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Datasheet Details

Part number FDB5690
Manufacturer Fairchild Semiconductor
File Size 391.08 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FDB5690 Datasheet
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FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS(ON).
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