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FDB5800 - N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Power tools Motor drives and Uninterruptible Power Supplies D

Features

  • RDS(on) = 4.6 mΩ (Typ. ), VGS = 10 V, ID = 80 A.
  • High Performance Trench Technology for Extermly Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability.
  • RoHs Compliant.

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Datasheet Details

Part number FDB5800
Manufacturer Fairchild Semiconductor
File Size 663.66 KB
Description N-Channel MOSFET
Datasheet download datasheet FDB5800 Datasheet
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FDB5800 — N-Channel Logic Level PowerTrench® MOSFET FDB5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ November 2013 Features • RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A • High Performance Trench Technology for Extermly Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability • RoHs Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Power tools • Motor drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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