Datasheet4U Logo Datasheet4U.com

FDB5800 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Power tools Motor drives and Uninterruptible Power Supplies D

Key Features

  • RDS(on) = 4.6 mΩ (Typ. ), VGS = 10 V, ID = 80 A.
  • High Performance Trench Technology for Extermly Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability.
  • RoHs Compliant.

📥 Download Datasheet

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDB52N20 MOSFET
FDB5645 60V N-Channel MOSFET
FDB5680 60V N-Channel MOSFET
FDB5686 60V N-Channel MOSFET
FDB5690 60V N-Channel MOSFET
FDB0165N807L 80V 310A N-Channel MOSFET
FDB016N04AL7 N-Channel MOSFET
FDB0170N607L 60V 300A N-Channel MOSFET
FDB0190N807L 80V 270A N-Channel MOSFET
FDB024N04AL7 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDB5800 — N-Channel Logic Level PowerTrench® MOSFET FDB5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ November 2013 Features • RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A • High Performance Trench Technology for Extermly Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability • RoHs Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Power tools • Motor drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.