FDB5800 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Power tools Motor drives and Uninterruptible Power Supplies D D G S D2-PAK G S Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage...
FDB5800 Key Features
- RDS(on) = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A
- High Performance Trench Technology for Extermly
- Low Gate Charge
- High Power and Current Handing Capability
- RoHs pliant