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FDB52N20 - MOSFET

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 49 mΩ (Max. ) @ VGS = 10 V, ID = 26 A.
  • Low Gate Charge (Typ. 49 nC).
  • Low Crss (Typ. 66 pF).
  • 100% Avalanche Tested.

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Datasheet preview – FDB52N20

Datasheet Details

Part number FDB52N20
Manufacturer Fairchild Semiconductor
File Size 423.65 KB
Description MOSFET
Datasheet download datasheet FDB52N20 Datasheet
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Full PDF Text Transcription

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FDB52N20 — N-Channel UniFETTM MOSFET FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features • RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A • Low Gate Charge (Typ. 49 nC) • Low Crss (Typ. 66 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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