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FDB5645 - 60V N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

  • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • High performance trench technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating. D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Sym.

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Datasheet Details

Part number FDB5645
Manufacturer Fairchild Semiconductor
File Size 422.33 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FDB5645 Datasheet
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FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at elevated temperature.
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