FDB6644
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
- Low gate charge (27 nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S
