FDB6690S mosfet equivalent, n-channel mosfet.
* 21 A, 30 V. RDS(ON) = 15.5 mΩ @ VGS = 10 V RDS(ON) = 23.0 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (11nC typical)
* Hig.
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S include.
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