5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capa.

in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-lin.

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly s.

FDC6330L

FDC6331L

FDC6332L

FDC6333C

FDC6301N

FDC6302P

FDC6303N

FDC6304P

FDC6305N

FDC6306P

FDC6308P

FDC6310P

FDC6312P