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Fairchild Semiconductor Electronic Components Datasheet

FDD068AN03L Datasheet

N-Channel PowerTrench MOSFET 30V/ 35A/ 6.8m

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December 2003
FDD068AN03L / FDU068AN03L
N-Channel PowerTrench® MOSFET
30V, 35A, 6.8m
Features
• rDS(ON) = 5.7m(Typ.), VGS = 4.5V, ID = 35A
• Qg(5) = 24nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Applications
• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 154oC, VGS = 10V)
Continuous (TC < 150oC, VGS = 4.5V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings
30
±20
35
35
17
Figure 4
168
80
0.53
-55 to 175
1.88
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1


Fairchild Semiconductor Electronic Components Datasheet

FDD068AN03L Datasheet

N-Channel PowerTrench MOSFET 30V/ 35A/ 6.8m

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDD068AN03L
FDU068AN03L
Device
FDD068AN03L
FDU068AN03L
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 25V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 35A, VGS = 10V
ID = 35A, VGS = 4.5V
ID = 35A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 35A
Ig = 1.0mA
Switching Characteristics (VGS = 4.5V)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 15V, ID = 35A
VGS = 4.5V, RGS = 6.2
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.43mH, IAS = 28A.
ISD = 35A
ISD = 15A
ISD = 35A, dISD/dt = 100A/µs
ISD = 35A, dISD/dt = 100A/µs
Min Typ Max Units
30 - - V
- -1
µA
- - 250
- - ±100 nA
1.2 - 2.5
- 0.0047 0.0057
- 0.0057 0.0068
- 0.0075 0.0092
V
- 2525 -
pF
- 490 -
pF
- 300 -
pF
- 2.1 -
- 46 60 nC
- 24 32 nC
- 2.3 3.0 nC
- 6.9 - nC
- 4.6 - nC
- 9.8 - nC
- - 283 ns
- 18 - ns
- 171 -
ns
- 31 - ns
- 61 - ns
- - 137 ns
- - 1.25 V
- - 1.0 V
- - 27 ns
- - 12 nC
©2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1


Part Number FDD068AN03L
Description N-Channel PowerTrench MOSFET 30V/ 35A/ 6.8m
Maker Fairchild Semiconductor
Total Page 11 Pages
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