Download FDD1600N10ALZ Datasheet PDF
FDD1600N10ALZ datasheet preview
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FDD1600N10ALZ Key Features

  • RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A
  • RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A
  • Low Gate Charge (Typ.2.78 nC)
  • Low Crss (Typ. 2.04 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • RoHS pliant
  • Consumer Appliances
  • LED TV and Monitor

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FDD1600N10ALZ Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application Consumer Appliances LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D G S D D-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS...