FDD1600N10ALZ datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A
* RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A
* Low Gate Charge (Typ.2.78 nC)
* Low Crss (Typ. 2.04.

Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application
* Consumer Appliances
* LED TV .

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