FDD16AN08A0 Overview
FDD16AN08A0 — N-Channel PowerTrench® MOSFET November 2013 FDD16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 50 A, 16 mΩ Features • RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 31 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications Gate to Source Voltage Drain Current Continuous (TC < 79oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 1)
FDD16AN08A0 Key Features
- RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A
- QG(tot) = 31 nC ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)