FDD2612 datasheet, mosfet equivalent, Fairchild Semiconductor

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FDD2612 Features and benefits

* 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability

FDD2612 Application

* DC/DC converter D D G G S TO-252 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-S.

FDD2612 Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

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