Datasheet Summary
MOSFET, N-Channel, POWERTRENCH)
150 V, 21 A, 66 mW
Features
- rDS(ON) = 58 mW (Typ.), VGS = 10 V, ID = 7 A
- Qg(tot) = 19 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- These Devices are Pb- Free, Halide Free and are RoHS pliant
Applications
- DC/DC Converters and Off- Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24 V and 48 V Systems
- High Voltage Synchronous Rectifier
- Direct Injection / Diesel Injection Systems
- 42 V Automotive Load Control
- Electronic Valve Train System
DATA SHEET .onsemi.
DRAIN (FLANGE)
GATE
SOURCE
DPAk3 (TO- 252 3 LD) CASE 369AS
MARKING...
