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FDD6632 - N-Channel MOSFET

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6632 June 2002 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 90mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317 Features • Fast switching • rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A • rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A • Qg(TOT) (Typ) = 2.6nC, VGS = 5V • Qgd (Typ) = 0.