FDD6632
Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Key Features
- Fast switching
- rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A
- rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A
- Qg(TOT) (Typ) = 2.6nC, VGS = 5V
- Qgd (Typ) = 0.8nC
- CISS (Typ) = 255pF
Applications
- DC/DC converters
