Datasheet Details
- Part number
- FDD6637_F085
- Manufacturer
- Fairchild Semiconductor
- File Size
- 287.48 KB
- Datasheet
- FDD6637_F085-FairchildSemiconductor.pdf
- Description
- P-Channel PowerTrench MOSFET
FDD6637_F085 Description
FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ .
FDD6637_F085 Features
* Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
* Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
* Typ Qg(10) = 45nC at VGS = -10V
* High performance trench technology for extremely low
rDS(on).
* Qualified to AEC Q101
FDD6637_F085 Applications
* Inverter
* Power Supplies
* December 2010
©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C
1
www. fairchildsemi. com
FDD6637_F085 P-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain
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