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FDD6637_F085 - P-Channel PowerTrench MOSFET

FDD6637_F085 Description

FDD6637_F085 P-Channel PowerTrench® MOSFET FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ .

FDD6637_F085 Features

* Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
* Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
* Typ Qg(10) = 45nC at VGS = -10V
* High performance trench technology for extremely low rDS(on).
* Qualified to AEC Q101

FDD6637_F085 Applications

* Inverter
* Power Supplies
* December 2010 ©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C 1 www. fairchildsemi. com FDD6637_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain

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P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDD6637_F085-like datasheet