FDD6N50

N-Channel MOSFET

ON Semiconductor

FDD6N50 Features

* RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A

* Low Gate Charge (Typ. 12.8 nC)

* Low Crss (Typ. 9 pF)

* 100% Avalanche Tested

* Improved dv/dt Capability Applications

* LCD/LED/PDP TV

* Lighting

* Uninterruptible Power Supply

FDD6N50 General Description

UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power con.

FDD6N50 Datasheet (0.96 MB)