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FDD6030L - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

DC/DC converter Motor Drives Fea

Features

  • 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast Switching Speed.
  • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Power Dissipation @.

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Datasheet Details

Part number FDD6030L
Manufacturer Fairchild Semiconductor
File Size 262.72 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD6030L Datasheet
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Full PDF Text Transcription

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FDD6030L March 2015 FDD6030L 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor Drives Features • 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.
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