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FDD6030L N-Channel MOSFET

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Description

FDD6030L March 2015 FDD6030L 30V N-Channel PowerTrench® MOSFET General .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on st.

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Features

* 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V
* Low gate charge
* Fast Switching Speed
* High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise

Applications

* DC/DC converter

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