FDD6N50TM-F085

N-Channel MOSFET

ON Semiconductor

FDD6N50TM-F085 Features

* 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V

* Low gate charge ( typical 12.8 nC)

* Low Crss ( typical 9 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Qualified to AEC Q101

* RoHS Compliant D Description These N-

FDD6N50TM-F085 General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy .

FDD6N50TM-F085 Datasheet (972.87 KB)