FDD6N50TM-F085
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N-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMO
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FDD6N50TM_F085 - 500V N-Channel MOSFET
(Fairchild Semiconductor)
FDD6N50TM_F085 500V N-Channel MOSFET
FDD6N50TM_F085
500V N-Channel MOSFET
Features
• 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical.
FDD6N50 - N-Channel MOSFET
(ON Semiconductor)
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
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• RDS(on) = 900 mΩ (Max.) @ VGS.
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• RDS(on) = 900 mΩ (Max.) @ VGS.
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• RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A • Low.
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• RDS(on) = 600 mΩ (Typ.) @ VGS = 10 V, ID = .
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