Datasheet4U Logo Datasheet4U.com

FDD6N50TM-F085 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.

Features

  • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V.
  • Low gate charge ( typical 12.8 nC).
  • Low Crss ( typical 9 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Qualified to AEC Q101.
  • RoHS Compliant D.

📥 Download Datasheet

Datasheet preview – FDD6N50TM-F085

Datasheet Details

Part number FDD6N50TM-F085
Manufacturer ON Semiconductor
File Size 972.87 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD6N50TM-F085 Datasheet
Additional preview pages of the FDD6N50TM-F085 datasheet.

📁 Similar Datasheet

  • FDD6N50TM_F085 - 500V N-Channel MOSFET (Fairchild Semiconductor)
  • FDD6N50 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD6N50F - MOSFET (Fairchild Semiconductor)
  • FDD6N20 - MOSFET (Fairchild Semiconductor)
  • FDD6N20TM - MOSFET (Fairchild Semiconductor)
  • FDD6N25 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD6030BL - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD6030L - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD6035AL - N-Channel/ Logic Level/ PowerTrench MOSFET (Fairchild Semiconductor)
  • FDD603AL - N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FDD6N50TM-F085 500V N-Channel MOSFET FDD6N50TM-F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant D Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Published: |