FDD6N20TM Datasheet PDF - Fairchild Semiconductor MOSFET Specs

FDD6N20TM - MOSFET

Datasheet Summary

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

RDS(on) = 600 mΩ (Typ. ) @ VGS = 10 V, ID = 2.3 A.
Low Gate Charge (Typ. 4.7 nC).
Low Crss (Typ. 6.3 pF).
100% Avalanche Tested.
RoHS Compliant.

Datasheet Details

Part number	FDD6N20TM
Manufacturer	Fairchild Semiconductor
File Size	623.75 KB
Description	MOSFET
Datasheet	FDD6N20TM Datasheet
Additional preview pages of the FDD6N20TM datasheet.

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Full PDF Text Transcription

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FDD6N20TM — N-Channel UniFETTM MOSFET FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 mΩ Features • RDS(on) = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A • Low Gate Charge (Typ. 4.7 nC) • Low Crss (Typ. 6.3 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Published: Jan 12, 2017 |