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FDD6N25 - N-Channel MOSFET

Datasheet Summary

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 2.2 A.
  • Low Gate Charge (Typ. 4.5 nC).
  • Low Crss (Typ. 5 pF).
  • 100% Avalanche Tested.

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Datasheet preview – FDD6N25

Datasheet Details

Part number FDD6N25
Manufacturer Fairchild Semiconductor
File Size 893.09 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD6N25 Datasheet
Additional preview pages of the FDD6N25 datasheet.

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Full PDF Text Transcription

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FDD6N25 — N-Channel UniFETTM MOSFET FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features • RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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