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FDD6N50TM_F085 - 500V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V.
  • Low gate charge ( typical 12.8 nC).
  • Low Crss ( typical 9 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Qualified to AEC Q101.
  • RoHS Compliant November 2010.

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Datasheet preview – FDD6N50TM_F085

Datasheet Details

Part number FDD6N50TM_F085
Manufacturer Fairchild Semiconductor
File Size 891.86 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet FDD6N50TM_F085 Datasheet
Additional preview pages of the FDD6N50TM_F085 datasheet.

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FDD6N50TM_F085 500V N-Channel MOSFET FDD6N50TM_F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant November 2010 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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