FDD6N50TM_F085 Datasheet - Fairchild Semiconductor

FDD6N50TM_F085 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FDD6N50TM_F085 Features

* 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V

* Low gate charge ( typical 12.8 nC)

* Low Crss ( typical 9 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Qualified to AEC Q101

* RoHS Compliant November 2010 Descript

FDD6N50TM_F085-FairchildSemiconductor.pdf

FDD6N50TM_F085 Datasheet Preview — Preview of FDD6N50TM_F085 PDF

Datasheet Details

Part number:

FDD6N50TM_F085

Manufacturer:

Fairchild Semiconductor

File Size:

891.86 KB

Description:

500v n-channel mosfet.

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FDD6N50TM_F085 FDD6N50TM_F085 500V N-Channel MOSFET Fairchild Semiconductor

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