FDD603AL Datasheet (Fairchild Semiconductor)

FDD603AL, N-Channel MOSFET

This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize onstate resistance.

These devices are particularly suited for low voltage applications such

FDD603AL Features

* 33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RD