FDD603AL N-Channel MOSFET

Fairchild Semiconductor

Description

FDD603AL July 1999 FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technolog.

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Datasheet Specifications

Part number: FDD603AL
Manufacturer: Fairchild Semiconductor
File Size: 237.55 KB
Datasheet: FDD603AL_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RD

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FDD603AL N-Channel MOSFET Fairchild Semiconductor

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