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FDD603AL Datasheet - Fairchild Semiconductor

FDD603AL_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDD603AL

Manufacturer:

Fairchild Semiconductor

File Size:

237.55 KB

Description:

N-channel mosfet.

FDD603AL, N-Channel MOSFET

This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize onstate resistance.

These devices are particularly suited for low voltage applications such

FDD603AL Features

* • 33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V. • • • Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RD

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