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FDD603AL - N-Channel MOSFET

FDD603AL Description

FDD603AL July 1999 FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technolog.

FDD603AL Features

* • 33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V. • • • Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RD

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDD603AL-like datasheet