FDD6637 35V P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDD6637 35V P-Channel PowerTrench® MOSFET March 2015 FDD6637 35V P-Channel PowerTrench® MOSFET General .
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss ca.

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Datasheet Specifications

Part number: FDD6637
Manufacturer: Fairchild Semiconductor
File Size: 279.36 KB
Datasheet: FDD6637_FairchildSemiconductor.pdf
Description: 35V P-Channel PowerTrench MOSFET

Features

* 55 A,
* 35 V RDS(ON) = 11.6 mΩ @ VGS =
* 10 V RDS(ON) = 18 mΩ @ VGS =
* 4.5 V
* High performance trench technology for extremely low RDS(ON)
* RoHS Compliant D D G S DTO-P-2A5K2 (TO-252) G S Absolute Maximum Ratings TA=25oC unless otherwise

Applications

* Applications
* Inverter

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FDD6637 35V P-Channel PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDD6637-like datasheet