FDD6637 - 35V P-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD6637
Manufacturer	Fairchild Semiconductor
File Size	279.36 KB
Description	35V P-Channel PowerTrench MOSFET
Datasheet	FDD6637 Datasheet
Additional preview pages of the FDD6637 datasheet.

Product details

Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Inverter Power Supplies

Features

55 A,.
35 V RDS(ON) = 11.6 mΩ @ VGS =.
10 V RDS(ON) = 18 mΩ @ VGS =.
4.5 V.
High performance trench technology for extremely low RDS(ON).
RoHS Compliant D D G S DTO-P-2A5K2 (TO-252) G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings VDSS VDS(Avalanche) VGSS ID PD TJ, TSTG Drain-Source Voltage Drain-Source Avalanche Voltage (maximum) (Note 4) Gate-Source Voltage Continuous Drain Current @TC=.

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Published: Jun 4, 2007 |