null30v n-channel powertrench mosfet.
* 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (33 .
* DC/DC converter
D
D G S TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-So.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching .
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