FDD6676AS Datasheet - Fairchild Semiconductor

FDD6676AS 30V N-Channel PowerTrench SyncFET

The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically inte.

FDD6676AS Features

* 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V

* Includes SyncFET schottky body diode

* Low gate charge (46nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability

FDD6676AS-FairchildSemiconductor.pdf