FDD6670S Datasheet (Fairchild Semiconductor)

FDD6670S, 30V N-Channel MOSFET

The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDD6670S includes an integrated Schottky diode using Fairchild’s monolithi

FDD6670S Features

* 64 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V

* Includes SyncFET Schottky body diode

* Low gate charge (17nC typical)

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability . Appl