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FDD6780A - N-Channel MOSFET

Description

Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous

Features

  • General.

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Full PDF Text Transcription

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FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET March 2015 25 V, 8.6 mΩ Features General Description „ Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A „ Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A „ 100% UIL test „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
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