FDD6780A Overview
Description
Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A - Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A - 100% UIL test - RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
