FDD6780A Description
Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDD6780A Key Features
- Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A
- Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A
- 100% UIL test
- RoHS pliant