FDD6N20 - MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FDD6N20
Manufacturer	Fairchild (now onsemi)
File Size	311.40 KB
Description	MOSFET
Datasheet	FDD6N20 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Overview

FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.

Key Features

RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A.
Low gate charge ( Typ. 4.7nC ).
Low Crss ( Typ. 6.3pF ).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant May 2007 UniFETTM tm.

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